R1EV5801MB_15 Datasheet, PDF (4/22 Pages) Renesas Technology Corp – 1M EEPROM (128-Kword × 8-bit)Ready/ Busy and RES function

R1EV5801MB Series
Recommended DC Operating Conditions
Parameter
Symbol
Min
Typ
Max
Supply voltage
V_CC
2.7
3.0
5.5
Input voltage
Operating temperature
V_SS
0
0
0
V_IL
−0.3*¹
⎯
0.8
V_IH
1.9*²
⎯
V_CC + 0.3
V_H
V_CC − 0.5
⎯
V_CC + 1.0
Topr
–40
⎯
+85
Notes: 1. V_IL (min): −1.0 V for pulse width ≤ 50 ns
2. V_IH (min): 2.2 V for V_CC = 3.6 to 5.5 V
Unit
V
V
V
V
V
°C
DC Characteristics (Ta = -40 to +85°C, V_CC = 2.7 V to 5.5 V)
Parameter
Symbol Min
Typ
Input leakage current
I_LI
⎯
⎯
Output leakage current
I_LO
⎯
⎯
Standby V_CC current
I_CC1
⎯
⎯
I_CC2
⎯
⎯
Operating V_CC current
I_CC3
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Output low voltage
V_OL
⎯
⎯
Output high voltage
V_OH
V_CC × 0.8
⎯
Notes: 1. I_LI on RES: 100 μA (max)
Max Unit
Test conditions
2*¹
μA V_CC = 5.5 V, Vin =5.5 V
2
μA V_CC = 5.5 V, Vout = 5.5/0.4 V
20
μA CE = V_CC
1
mA CE = V_IH
15
mA Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V_CC = 5.5 V
6
mA Iout = 0 mA, Duty = 100%,
Cycle = 1 µs, V_CC = 3.3 V
50
mA Iout = 0 mA, Duty = 100%,
Cycle = 150 ns, V_CC = 5.5 V
15
mA Iout = 0 mA, Duty = 100%,
Cycle = 250 ns, V_CC = 3.3 V
0.4
V I_OL = 2.1 mA
⎯
V I_OH = −400 μA
Capacitance (Ta = +25°C, f = 1 MHz)
Parameter
Input capacitance*¹
Output capacitance*¹
Symbol
Min
Typ
Max
Cin
⎯
⎯
6
Cout
⎯
⎯
12
Note: 1. This parameter is periodically sampled and not 100% tested.
Unit
Test conditions
pF Vin = 0 V
pF Vout = 0 V
R10DS0209EJ0100 Rev.1.00
Jun 09, 2014
Page 4 of 20