R1EV5801MB_15 Datasheet, PDF (3/22 Pages) Renesas Technology Corp – 1M EEPROM (128-Kword × 8-bit)Ready/ Busy and RES function

R1EV5801MB Series
Block Diagram
V _CC
V _SS
RES
OE
CE
WE
RES
A0
to
A6
A7
to
A16
High voltage generator Voltage detector
Control logic and timing
Address
buffer and
latch
Y decoder
X decoder
I/O0 to I/O7 RDY/Busy
I/O buffer
and
input latch
Y gating
Memory array
Data latch
Operation Table
Operation
CE
OE
WE
RES
Read
Standby
V_IL
V_IL
V_IH
V_IH
×*²
×
V_H*¹
×
Write
V_IL
V_IH
V_IL
V_H
Deselect
V_IL
V_IH
V_IH
V_H
Write Inhibit
×
×
V_IH
×
×
V_IL
×
×
Data Polling
V_IL
V_IL
V_IH
V_H
Program reset
×
×
×
V_IL
Notes: 1. Refer to the recommended DC operating conditions.
2. × : Don’t care
RDY/Busy
High-Z
High-Z
High-Z to V_OL
High-Z
⎯
⎯
V_OL
High-Z
I/O
Dout
High-Z
Din
High-Z
⎯
⎯
Dout (I/O7)
High-Z
Absolute Maximum Ratings
Parameter
Symbol
Value
Unit
Supply voltage relative to V_SS
Input voltage relative to V_SS
Operating temperature range*²
Storage temperature range
V_CC
−0.6 to +7.0
V
Vin
−0.5*¹ to +7.0
V
Topr
–40 to +85
°C
Tstg
–55 to +125
°C
Notes: 1. Vin min = −3.0 V for pulse width ≤ 50 ns
2. Including electrical characteristics and data retention
R10DS0209EJ0100 Rev.1.00
Jun 09, 2014
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