R1EV5801MB_15 Datasheet, PDF (1/22 Pages) Renesas Technology Corp – 1M EEPROM (128-Kword × 8-bit)Ready/ Busy and RES function

Data Sheet
R1EV5801MB Series
1M EEPROM (128-Kword × 8-bit)Ready/
Busy and RES function
R10DS0209EJ0100
Rev.1.00
Jun 09, 2014
Description
Renesas Electronics’ R1EV5801MB is an electrically erasable and programmable ROM organized as 131072-word × 8-
bit. It has realized high speed, low power consumption and high reliability by employing advanced MONOS memory
technology and CMOS process and circuitry technology. It also has a 128-byte page programming function to make the
write operations faster.
Features
• Single voltage supply: 2.7 V to 5.5 V
• Access time:
⎯ 150 ns (max) at Vcc=4.5 V to 5.5 V
⎯ 250 ns (max) at Vcc=2.7 V to 5.5 V
• Power dissipation
⎯ Active: 20 mW/MHz, (typ)
⎯ Standby: 110 μW (max)
• On-chip latches: address, data, CE, OE, WE
• Automatic byte write: 10 ms (max)
• Automatic page write (128 bytes): 10 ms (max)
• Data polling and RDY/Busy
• Data protection circuit on power on/off
• Conforms to JEDEC byte-wide standard
• Reliable CMOS with MONOS cell technology
• 10⁴ or more erase/write cycles
• 10 or more years data retention
• Software data protection
• Write protection by RES pin
• Temperature range: −40 to +85°C
• There are lead free products.
R10DS0209EJ0100 Rev.1.00
Jun 09, 2014
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