HAT2058R_09 Datasheet, PDF (4/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2058R
Static Drain to Source on State Resistance
vs. Temperature
0.5
Pulse Test
0.4
4A
0.3
I_D = 1 A, 2 A
0.2
V_GS = 4 V
0.1
0
–40
10 V
0
40
4A
1 A, 2 A
80 120 160
Case Temperature Tc (°C)
1000
500
Body-Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
10
0.1 0.3 1 3 10 30 100
Reverse Drain Current I_DR (A)
Dynamic Input Characteristics
200
20
I_D = 4 A
160
V_DD = 80 V
50 V
120
25 V
16
V_GS
12
V_DS
80
8
40
V_DD = 80 V
4
50 V
25 V
0
0
0
8
16 24 32 40
Gate Charge Qg (nc)
Preliminary
Forward Transfer Admittance vs.
Drain Current
50
20
Tc = –25°C
10
25°C
5
2
75°C
1
V_DS = 10 V
Pulse Test
0.5
0.1 0.3 1 3 10 30 100
Drain Current I_D (A)
5000
Typical Capacitance vs.
Drain to Source Voltage
2000
1000
500
Ciss
200
100
Coss
50
Crss
20 ^VGS ^{= 0}
f = 1 MHz
10
0
10 20 30 40 50
Drain to Source Voltage V_DS (V)
1000
Switching Characteristics
300
td(off)
100
tf
30
tr
10
td(on)
3
1
0.1 0.3
V_GS = 10 V, V_DD = 30 V
PW = 5 μs, duty ≤ 1 %
1 3 10 30 100
Drain Current I_D (A)
REJ03G1174-0300 Rev.3.00 Aug 25, 2009
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