HAT2058R_09 Datasheet, PDF (2/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2058R
Electrical Characteristics
Item
Drain to source breakdown voltage
Gate to source breakdown voltage
Zero gate voltage drain current
Gate to source leak current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state resistance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward voltage
Body-drain diode reverse recovery time
Note: 5. Pulse test
Preliminary
(Ta = 25°C)
Symbol Min Typ Max Unit
Test Conditions
V _{(BR) DSS} 100
—
—
V I_D = 10 mA, V_GS = 0
V _{(BR) GSS}
±20
—
—
V I_G = ±100 μA, V_DS = 0
I_DSS
—
—
1
μA V_DS = 100 V, V_GS = 0
I_GSS
—
—
±10
μA V_GS = ±16 V, V_DS = 0
V_{GS (off)}
|y_fs|
R_{DS (on)}
R_{DS (on)}
1.0
— 2.5
V V_DS = 10 V, I_D = 1 mA
3
5
—
S
I_D = 2 A, V_DS = 10 V ^{Note 5}
—
120
145
mΩ I_D = 2 A, V_GS = 10 V ^{Note 5}
—
150
180
mΩ I_D = 2 A, V_GS = 4 V ^{Note 5}
Ciss
— 420 —
pF V_DS = 10 V, V_GS = 0
Coss
— 180 —
pF f = 1 MHz
Crss
— 100 —
pF
t_{d (on)}
t_r
t_{d (off)}
t_f
V_DF
t_rr
—
10
—
—
30
—
— 110 —
—
60
—
— 0.85 1.1
—
75
—
ns V_GS = 10 V, I_D = 2 A,
ns VDD ≅ 30 V
ns
ns
V
I_F = 4 A, V_GS = 0 ^{Note 5}
ns I_F = 4 A, V_GS = 0
di_F/dt = 50 A/μs
REJ03G1174-0300 Rev.3.00 Aug 25, 2009
Page 2 of 7