HAT2058R_09 Datasheet, PDF (3/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2058R
Main Characteristics
Power vs. Temperature Derating
4.0
Test Condition:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3.0
2.0
1.0
1 _{Drive Operation}
0
0
50
100
150
200
Ambient Temperature Ta (°C)
Typical Output Characteristics
20
10 V
16
6V
12
Pulse Test
4V
8
4
V_GS = 2 V
0
0
2
4
6
8
10
Drain to Source Voltage V_DS (V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
1.0
Pulse Test
0.8
0.6
I_D = 4 A
0.4
2A
0.2
1A
0
0
4
8
12 16
20
Gate to Source Voltage V_GS (V)
REJ03G1174-0300 Rev.3.00 Aug 25, 2009
Page 3 of 7
Preliminary
Maximum Safe Operation Area
100
10 μs
30
10
100 _μs
3
1
0.3
0.1
DC
PW ^{1 ms}
Operation ^Oinperation
this area is
limited by R_{DS (on)}
Ta = 25°C
= ₁₀
(PW
≤
ms
1^N₀^o_s^te₎⁶
0.03 _{1 shot Pulse}
1 Drive Operation
0.01
0.1 0.3 1 3 10 30 100 300 1000
Drain to Source Voltage V_DS (V)
Note 6:
When using the glass epoxy board
(FR4 40 × 40 × 1.6 mm)
Typical Transfer Characteristics
10
V_DS = 10 V
Pulse Test
8
6
4
2
Tc = 75°C
25°C
–25°C
0
0
1
2
3
4
5
Gate to Source Voltage V_GS (V)
Static Drain to Source on State Resistance
vs. Drain Current
0.5
0.2
V_GS = 4 V
0.1
10 V
0.05
0.02
0.01
0.1 0.2 0.5 1 2
Pulse Test
5 10 20 50
Drain Current I_D (A)