HAT2058R_09 Datasheet, PDF (1/8 Pages) Renesas Technology Corp – Silicon N Channel Power MOS FET High Speed Power Switching

HAT2058R
Silicon N Channel Power MOS FET
High Speed Power Switching
Features
• Low on-resistance
• Capable of 4 V gate drive
• Low drive current
• High density mounting
• “J” is for Automotive application
High temperature D-S leakage guarantee
Avalanche rating
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8 <FP-8DAV> )
78
DD
56
DD
87 ⁶⁵
1234
2
4
G
G
S1
MOS1
S3
MOS2
Preliminary
REJ03G1174-0300
Rev.3.00
Aug 25, 2009
1, 3
2, 4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
Item
Symbol
Value
Drain to source voltage
V_DSS
100
Gate to source voltage
Drain current
Drain peak current
V_GSS
I_D ^{Note 2}
I_{D (pulse)} ^{Note 1}
±20
4
32
Body-drain diode reverse drain current
I_DR
4
Avalanche current
I_AP ^{Note 4}
—
Avalanche energy
E_AR ^{Note 4}
—
Channel dissipation
Pch ^{Note 2}
2
Pch ^{Note 3}
3
Channel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. 1 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
3. 2 Drive operation: When using the glass epoxy board (FR4 40 × 40 × 1.6 mm), PW ≤ 10 s
4. Value at Tch = 25°C, Rg ≥ 50 Ω
(Ta = 25°C)
Unit
V
V
A
A
A
A
mJ
W
W
°C
°C
REJ03G1174-0300 Rev.3.00 Aug 25, 2009
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