HAF1010RJ_16 Datasheet, PDF (4/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1010RJ
Drain to Source On State Resistance
vs. Temperature
500
Pulse Test
400
I_D = –5 A
300
–2.5 A
V_GS = –4 V
200
100
V_GS = –10 V
–1 A
–5 A
–2.5 A
–1 A
0
–25 0
25 50 75 100 125
Case Temperature Tc (°C)
1000
500
Body to Drain Diode Reverse
Recovery Time
200
100
50
20
di / dt = 50 A / μs
V_GS = 0, Ta = 25°C
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Reverse Drain Current I_DR (A)
Reverse Drain Current vs.
Source to Drain Voltage
–5
Pulse Test
–4
-10 V
–3
–2
-5 V
V_GS = 0 V
–1
0
–0.4 –0.8 –1.2 –1.6 –2.0
Source to Drain Voltage V_SD (V)
Target Specifications
Forward Transfer Admittance vs.
Drain Current
10
V_DS = –10 V
5 _{Pulse Test}
Tc = –25°C
2
1
25°C
0.5
75°C
0.2
0.1
0.05
0.02
0.01
–0.01
–0.1
–1
–10
Drain Current I_D (A)
Switching Characteristics
100
50
20
10 ^td(off)
tr
5
tf
2
td(on)
1
0.5
0.2
0.1
–0.1 –0.2
V_GS = –10 V, V_DD = –30 V
PW = 300 μs, duty < 1 %
–0.5 –1 –2
–5 –10
Drain Current I_D (A)
10000
Typical capacitance vs.
Drain to Source Voltage
V_GS = 0
f = 1 MHz
1000
Coss
100
0
–10 –20 –30 –40 –50 –60
Drain to Source V_DS (V)
R07DS1361EJ0200 Rev.2.00
Sep 06, 2016
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