HAF1010RJ_16 Datasheet, PDF (3/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1010RJ
Main Characteristics
Power vs. Temperature Derating
4
Test condition.
When using the glass epoxy board.
3 ^{(FR4 40 x 40 x 1.6 mm), (PW ≤ 10s)}
2
1
0
50
100
150
200
Case Temperature Tc (°C)
Typical Output Characteristics
–10
–10 V
–6 V
–8 V
–8
–4 V
–6
V_GS = –3.5 V
–4
–2
Pulse Test
0
–2 –4 –6 –8 –10
Drain to Source Voltage V_DS (V)
Drain to Saturation Voltage vs.
Gate to Source Voltage
–2.0
Pulse Test
–1.6
–1.2
–0.8
I _D = –5 A
–0.4
–2.5 A
–1 A
0
–2 –4 –6 –8 –10
Gate to Source Voltage V_GS (V)
Target Specifications
Maximum Safe Operation Area
-100
Ta = 25°C Thermal shut down
-30
operation area
100 _μs
-10
-3
PW ^{1 ms}
-1
-0.3
-0.01
DC _Operation
Operation
in this area
is limited by R_DS(on)
= _{10 ms}
(PW_{≤10Nsot)e5}
-0.03
-0.3 -0.5 -1 -2 -5 -10 -20 -50
-100
Drain Source Voltage V_DS (V)
Note 5:
When using the glass epoxy board.
( FR4 40 x 40 x 1.6 mm)
Typical Transfer Characteristics
–5 _{V DS = –10 V –25°C}
Pulse Test
25°C
Tc = 75°C
–4
–3
–2
Tc = 75°C
–1
25°C
–25°C
0
–1 –2 –3 –4 –5
Gate to Source Voltage V_GS (V)
Static Drain to Source State Resistance
vs. Drain Current
1000
Pulse Test
500
V_GS = –4 V
200
100 ^{–10 V}
50
20
10
–0.1 –0.2 –0.5 –1 –2
–5 –10
Drain Current I_D (A)
R07DS1361EJ0200 Rev.2.00
Sep 06, 2016
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