HAF1010RJ_16 Datasheet, PDF (1/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

Target Specifications Datasheet
HAF1010RJ
Silicon P Channel MOS FET Series
Power Switching
R07DS1361EJ0200
Rev.2.00
Sep 06, 2016
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
Features
Logic level operation to (–4 to –6 V Gate drive)
Built-in the over temperature shut-down circuit
High endurance capability against to the shut-down circuit
Latch type shut down operation (need 0 voltage recovery)
Built-in the current limitation circuit.
High density mounting
Power supply voltage applies 12 V and 24 V.
Outline
RENESAS Package code: PRSP0008DD-D
(Package name: SOP-8<FP-8DA>))
8 ^{7 65}
5678
DDDD
1 ²³⁴
4
G
Gate Resistor
Current
Limitation
Circuit
Temperature
Sensing
Circuit
Latch
Circuit
Gate
Shut-down
Circuit
1, 2, 3
4
5, 6, 7, 8
Source
Gate
Drain
Absolute Maximum Ratings
SSS
123
Item
Symbol
Ratings
Drain to source voltage
VDSS
–60
Gate to source voltage
VGSS
–16
Gate to source voltage
VGSS
2.5
Drain current
ID
–5
Drain peak current
ID (pulse) ^Note1
–10
Body-drain diode reverse drain current
IDR
–5
Cannel dissipation
Pch ^Note2
2.5
Cannel temperature
Tch
150
Storage temperature
Tstg
–55 to +150
Notes: 1. PW  10 s, duty cycle  1%
2. When using the glass epoxy board (FR4 40 x 40 x 1.6 mm), PW ≤ 10s
R07DS1361EJ0200 Rev.2.00
Sep 06, 2016
(Ta = 25°C)
Unit
V
V
V
A
A
A
W
C
C
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