HAF1010RJ_16 Datasheet, PDF (2/7 Pages) Renesas Technology Corp – Silicon P Channel MOS FET Series Power Switching

HAF1010RJ
Typical Operation Characteristics
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Symbol
VIH
VIL
IIH1
IIH2
IIL
IIH(sd)1
IIH(sd)2
Tsd
Vop
Min
–3.5
—
—
—
—
—
—
—
–3.5
Typ
—
—
—
—
—
–0.8
–0.35
175
—
Max
—
–1.2
–100
–50
–1
—
—
—
–12
Target Specifications
Unit
V
V
A
A
A
mA
mA
C
V
(Ta = 25°C)
Test Conditions
Vi = –8V, VDS =0
Vi = –3.5V, VDS =0
Vi = –1.2V, VDS =0
Vi = –8V, VDS =0
Vi = –3.5V, VDS =0
Cannel temperature
Electrical Characteristics
Item
Drain current
Drain current
Drain to source breakdown voltage
Gate to source breakdown voltage
Gate to source breakdown voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cut off voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Symbol
ID1
ID2
V(BR)DSS
V(BR)GSS
V(BR)GSS
IGSS1
IGSS2
IGSS3
IGSS4
IGS(OP)1
IGS(OP)2
IDSS
VGS(off)
|yfs|
RDS(on)
RDS(on)
Coss
Min
–1.5
—
–60
–16
2.5
—
—
—
—
—
—
—
–1.1
2
—
—
—
Typ
—
—
—
—
—
—
—
—
—
–0.8
–0.35
—
—
4
200
140
326
Max
—
–10
—
—
—
–100
–50
–1
100
—
—
–10
–2.25
—
340
200
―
Turn-on delay time
td(on)
—
2
―
Rise time
tr
—
7.6
—
Turn off delay time
td(off)
—
3.2
―
Fall time
tf
—
3.2
—
Body-drain diode forward voltage
V_DF
—
–0.9
—
Body-drain diode reverse recovery
trr
—
77
—
time
Over lord shut down
operation time ^note4
tos1
—
4.4
—
tos2
—
2
—
Notes: 3. Pulse test
4. Including the junction temperature rise of the lorded condition
Unit
A
mA
V
V
V
A
A
A
A
mA
mA
A
V
S
m
m
pF
s
s
s
s
V
ns
ms
ms
(Ta = 25°C)
Test Conditions
VGS = –3.5 V, VDS = –2 V
VGS = –1.2 V, VDS = –2 V
ID = –10 mA, VGS = 0
IG = –800 A, VDS = 0
IG = 100 A, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VGS = –1.2 V, VDS = 0
VGS = 2.4 V, VDS = 0
VGS = –8 V, VDS = 0
VGS = –3.5 V, VDS = 0
VDS = –60 V, VGS = 0
VDS = –10 V, ID = –1 mA
ID =–2.5 A, VDS =–10 V^note3
ID = –2.5 A, VGS = –4 V^note3
ID = –2.5 A, VGS = –10 V^note3
VDS = –10 V, VGS = 0,
f = 1 MHz
VGS = –5 V, ID= –2.5 A, RL =
12 
IF = –5 A, VGS = 0
IF = –5 A, VGS = 0
diF/dt = 50 A/s
VGS = –5 V, VDD = –16 V
VGS = –5 V, VDD = –24 V
R07DS1361EJ0200 Rev.2.00
Sep 06, 2016
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