PD78F0701Y_15 Datasheet, PDF (27/54 Pages) Renesas Technology Corp – 8-BIT SINGLE-CHIP MICROCONTROLLER

µPD78F0701Y
The following explains the entry RAM area in detail.
(a) Flash memory start address
Flash memory address value used for _FlashByteWrite subroutine
(b) Flash memory end address
Flash memory address value used for _FlashGetInfo subroutine
(c) Number of bytes written to flash memory
Area number and number of bytes written to flash memory
(d) Write time
Set one of the following values according to the operating frequency.
fX (MHz)
1.00 to 1.28
1.29 to 2.56
2.57 to 5.12
5.13 to 8.38
Set value
20H
40H
60H
80H
(e) Erase time data
Set value = Erase time (s) × Operating frequency/2⁹ + 1
(Erase time range: 0.5 to 20 s)
Example: When the erase time is two seconds and the operating frequency is 6.29 MHz
Set value = 2 × 6,291,456/512 + 1
= 24,577 (decimal)
= 6001H (hexadecimal)
(f) Write data storage buffer first address
This area stores the first address of the write data storage buffer area. The data (write data) in the RAM
addressed by using the data in this area is written into flash memory (_FlashByteWrite subroutine). Up
to 256 bytes of write data can be specified with the data in this area as the first address.
(g) Total number of blocks
Total number of flash memory blocks stored by _FlashGetInfo subroutine
(h) Total number of areas
Total number of flash memory areas stored by _FlashGetInfo subroutine
Preliminary Product Information U13563EJ2V0PM00
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