PD78F0701Y_15 Datasheet, PDF (21/54 Pages) Renesas Technology Corp – 8-BIT SINGLE-CHIP MICROCONTROLLER

µPD78F0701Y
6.4 Flash Memory Programming by Self-Writing
The flash memory of the µPD78F0701Y can be rewritten by a program.
(1) Configuration of flash memory
Figure 6-5 shows the configuration of the flash memory.
Figure 6-5. Configuration of Flash Memory
Normal operation mode
Self-writing mode
F7FFH
F000H
EFFFH
Internal extension
RAM are (2K bytes)
F7FFH _{Internal extension}
F000H ^{RAM are (2K bytes)}
EFFFH
Erase/write routine call
Flash memory area
(60K bytes)
FLPMC 09H
FLPMC 08H
Flash memory area
(60K bytes)
* Cannot be
accessed by an
ordinary instruction.
9BFFH
Erase/write
8000H
Firmware area
(erase/write routine
included)
0000H
0000H
Preliminary Product Information U13563EJ2V0PM00
19