PD46364092B Datasheet, PDF (13/36 Pages) Renesas Technology Corp – 36M-BIT DDR II SRAM 2-WORD BURST OPERATION

μPD46364092B, μPD46364182B, μPD46364362B
Electrical Characteristics
Absolute Maximum Ratings
Parameter
Supply voltage
Output supply voltage
Input voltage
Input / Output voltage
Operating ambient temperature
Symbol
V_DD
V_DDQ
V_IN
V_I/O
TA
Storage temperature
Tstg
Conditions
(E** series)
(E**Y series)
Rating
Unit
−0.5 to +2.5
V
−0.5 to V_DD
V
−0.5 to V_DD+0.5 (2.5 V MAX.)
V
−0.5 to V_DDQ+0.5 (2.5 V MAX.)
V
0 to 70
°C
−40 to 85
°C
−55 to +125
°C
Caution Exposing the device to stress above those listed in Absolute Maximum Ratings could cause
permanent damage. The device is not meant to be operated under conditions outside the limits
described in the operational section of this specification. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability.
Recommended DC Operating Conditions (TA = 0 to 70°C, TA = -40 to 85°C)
Parameter
Supply voltage
Output supply voltage
Input HIGH voltage
Input LOW voltage
Clock input voltage
Reference voltage
Symbol
V_DD
V_DDQ
V_{IH (DC)}
V_{IL (DC)}
V_IN
V_REF
Conditions
MIN.
1.7
1.4
V_REF +0.1
−0.3
−0.3
0.68
TYP.
1.8
MAX. Unit Note
1.9
V
V_DD
V1
V_DDQ+0.3 V 1, 2
V_REF −0.1 V 1, 2
V_DDQ+0.3 V 1, 2
0.95
V
Notes 1. During normal operation, V_DDQ must not exceed V_DD.
2. Power-up: VIH ≤ V_DDQ+0.3 V and V_DD ≤ 1.7 V and V_DDQ ≤ 1.4 V for t ≤ 200 ms
Recommended AC Operating Conditions (TA = 0 to 70°C, TA = -40 to 85°C)
Parameter
Input HIGH voltage
Input LOW voltage
Symbol
V_{IH (AC)}
V_{IL (AC)}
Conditions
MIN.
V_REF +0.2
MAX.
V_REF −0.2
Unit Note
V
1
V
1
Note 1. Overshoot: V_{IH (AC)} ≤ V_DD+0.7 V (2.5 V MAX.) for t ≤ TKHKH/2
Undershoot: V_{IL (AC)} ≥ −0.5 V for t ≤ TKHKH/2
Control input signals may not have pulse widths less than TKHKL (MIN.) or operate at cycle rates less than
TKHKH (MIN.).
R10DS0091EJ0400 Rev.4.00
Nov 09, 2012
Page 13 of 35