CM1800HC-34N Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1800HC-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
4500
REVERSE BIAS
SAFE OPERATING AREA
(TYPICAL)
4000
3500
3000
2500
2000
1500
1000
500
V_CC ≤ 1200V
V_GE = ±15V
R_G ≥ 2.2Ω
T_j = 125°C
0
0
500 1000 1500 2000
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
4500
4000
3500
3000
REVERSE RECOVERY
SAFE OPERATING AREA
(TYPICAL)
V_CC ≤ 1200V
di/dt ≤ 4200A/µs
T_j = 125°C
2500
2000
1500
1000
500
0
0
500 1000 1500 2000
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
1.2
SINGLE PULSE
1.0
T_C = 25°C
IGBT = R_th(j-c)Q =
12.5°K/kW
0.8 _{FWDI = Rth(j-c)D =}
28°K/kW
0.6
0.4
0.2
0
10^-3
10^-2
10^-1
10⁰
10¹
TIME, (s)
6
Rev. 4/09