CM1800HC-34N Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM1800HC-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Cutoff Current
I_CES
V_CE = V_CES, V_GE = 0V, T_j = 25°C

V_CE = V_CES, V_GE = 0V, T_j = 125°C
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 180mA, V_CE = 10V
Gate Leakage CurrentI_GES
V_GE = V_GES, V_CE = 0V
–
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 1800A, V_GE = 15V, T_j = 25°C

I_C = 1800A, V_GE = 15V, T_j = 125°C
Input Capacitance
C_ies
V_CE = 10V, V_GE = 0V,
Output Capacitance
C_oes
f = 100kHz,
Reverse Transfer Capacitance
C_res
T_j = 25°C
Total Gate Charge
Q_G
V_CC = 850V, I_C = 1800A, V_GE = 15V
Emitter-Collector Voltage**
V_EC
I_E = 1800A, V_GE = 0V, T_j = 25°C

I_E = 1800A, V_GE = 0V, T_j = 125°C
Turn-On Delay Time
t_d(on)
V_CC = 850V, I_C = 1800A,
Turn-On Rise Time
t_r
V_GE1 = -V_GE2 = 15V, R_G(on) = 0.9Ω,
Turn-On Switching Energy
E_on
Inductive Load
Turn-Off Delay Time
t_d(off)
V_CC = 850V, I_C = 1800A,
Turn-Off Fall Time
t_f
V_GE1 = -V_GE2 = 15V, R_G(off) = 2.2Ω,
Turn-Off Switching Energy
E_off
Inductive load
Reverse Recovery Time**
I_rr
V_CC = 850V, I_E = 1800A,
Reverse Recovery Time**
t_rr
di_e/dt = -3700A/µs,
Reverse Recovery Charge**
Q_rr
T_j = 125°C,
Reverse Recovery Energy**
E_rec
Inductive Load
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Min.
–
–
6.0
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
Typ.
–
4.5
7.0
0.5
2.15
2.4
264
14.4
4.2
10.2
2.6
2.3
1.0
0.4
550
1.2
0.3
560
720
1.0
420
280
Max.
6.0
12.0
8.0
µA
2.8
–
–
–
–
–
3.3
–
–
–
–
–
–
–
–
–
–
–
Units
mA
mA
Volts
Volts
Volts
nF
nF
nF
µC
Volts
Volts
µs
µs
mJ/P
µs
µs
mJ/P
Amperes
µs
µC
mJ/P
Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Typ.
Max. Units
Thermal Resistance, Junction to Case
R_th(j-c) Q
Per IGBT
–
–
12.5 K/kW
Thermal Resistance, Junction to Case
R_th(j-c) D
Per FWDi
–
–
28.0 K/kW
Contact Thermal Resistance, Case to Fin
R_th(c-f)
Per Module, Thermal Grease Applied
–
11.0
–
K/kW
Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Comparative Tracking Index
CTI
–
Clearance
–
–
Creepage Distance
–
–
Internal Inductance
L_C-E(int)
–
Internal Lead Resistance
R_C-E(int)
–
Min.
Typ.
Max. Units
600
–
–
–
19.5
–
–
mm
32.0
–
–
mm
–
16
–
nH
–
0.14
–
mΩ
Rev. 4/09
3