CM1800HC-34N Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1800HC-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10¹
V_CC = 850V
V_GE = ±15V
R_G(off) = 2.2Ω
R_G(on) = 0.9Ω
L_S = 100nH
T_j = 125°C
10⁰
10^-1
0
1000 2000 3000 4000
COLLECTOR CURRENT, I_C, (AMPERES)
2000
1600
1200
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
V_CC = 850V
V_GE = ±15V
R_G(off) = 2.2Ω
R_G(on) = 0.9Ω
L_S = 100nH
T_j = 125°C
800
400
0
0
10³
1000 2000 3000 4000
COLLECTOR CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
C_ies
10²
10¹
C_oes
V_GE = 15V
f = 100kHz
C_res
T_j = 25°C
10⁰
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10¹
V_CC = 850V
V_GE = ±15V
R_G(off) = 2.2Ω
R_G(on) = 0.9Ω
L_S = 100nH
T_j = 125°C
10⁰
10^-1
0
1000 2000 3000 4000
COLLECTOR CURRENT, I_C, (AMPERES)
3500
3000
2500
2000
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
V_CC = 850V
V_GE = ±15V
I_C = 1800A
L_S = 100nH
T_j = 125°C
1500
1000
500
0
0
2
4
6
8
10
GATE RESISTANCE, R_G, (Ω)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
4.0
V_GE = 15V
3.5
T_j = 25°C
3.0
T_j = 125°C
2.5
2.0
1.5
1.0
0.5
0
0
1000 2000 3000 4000
COLLECTOR CURRENT, I_C, (AMPERES)
2000
1600
1200
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
V_CC = 850V
V_GE = ±15V
R_G(off) = 2.2Ω
R_G(on) = 0.9Ω
L_S = 100nH
T_j = 125°C
800
400
0
0
3500
1000 2000 3000 4000
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
3000
2500
2000
1500
1000
500
0
0
V_CC = 850V
V_GE = ±15V
I_C = 1800A
L_S = 100nH
T_j = 125°C
2
4
6
8
10
GATE RESISTANCE, R_G, (Ω)
GATE CHARGE, V_GE
20
I_C = 1200A
V_CC = 850V
16 T_j = 25°C
12
8
4
0
0 2 4 6 8 10 12 14
GATE CHARGE, Q_G, (nC)
Rev. 4/09
5