CM1800HC-34N Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
CM1800HC-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Operating Temperature
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_c = 75°C)
Peak Collector Current (Pulse)
Emitter Current** (T_c = 25°C)
Emitter Surge Current** (Pulse)
Maximum Collector Dissipation (T_c = 25°C, IGBT Part, T_j(max) ≤ 125°C)
Max. Mounting Torque M8 Main Terminal Screws
T_j
T_stg
T_opr
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_C
–
Max. Mounting Torque M6 Mounting Screws
–
Max. Mounting Torque M4 Auxiliary Terminal Screws
–
Module Weight (Typical)
–
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
V_iso
Maximum Turn-Off Switching Current (V_CC ≤ 1200V, V_GE = ±15V, T_j = 125°C)
–
Short Circuit Capability, Maximum Pulse Width (V_CC ≤ 1200V, V_GE = ±15V, T_j = 125°C)
–
Maximum Reverse Recovery Instantaneous Power
–
(V_CC ≤ 1200V, di_e/dt ≤ 4200A/µs, T_j = 125°C)
* Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_oprmax rating (125°C).
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM1800HC-34N
-40 to 150
-40 to 125
-40 to 125
1700
±20
1800
3600*
1800
3600*
10000
177
53
27
0.8
4000
3600
10
750
Units
°C
°C
°C
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
in-lb
in-lb
in-lb
kg
Volts
Amperes
µs
kW
2
Rev. 4/09