CM1800HC-34N Datasheet, PDF (4/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1800HC-34N
Single IGBTMOD™ HVIGBT Module
1800 Amperes/1700 Volts
3600
3200
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j = 25°C
15V
2800
2400
V_GE = 20V ^12V
2000
10V
1600
1200
9V
800
400
8V
0
01 23 45 6
COLLECTOR-EMITTER VOLTAGE, V_CE(sat), (VOLTS)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
700
V_CC = 850V
600 V_GE = ±15V
R_G = 0.9Ω
500 L_S = 100nH
T_j = 125°C
400
300
200
100
0
0
1000 2000 3000 4000
EMITTER CURRENT, I_E, (AMPERES)
3600
3200
2800
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 20V
T_j = 25°C
T_j = 125°C
2400
2000
1600
1200
800
400
0
6 7 8 9 10 11 12 13 14
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
4.0
V_GE = 0V
3.5
T_j = 25°C
3.0
T_j = 125°C
2.5
2.0
1.5
1.0
0.5
0
0
1000 2000 3000 4000
EMITTER CURRENT, I_E, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
700
V_CC = 850V
600 V_GE = ±15V
I_C = 1800A
500 L_S = 100nH
T_j = 125°C
400
300
200
100
0
0
10¹
2
4
6
8
10
GATE RESISTANCE, R_G, (Ω)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10⁰
10^-1
0
V_CC = 850V
V_GE = ±15V
R_G(off) = 2.2Ω
R_G(on) = 0.9Ω
L_S = 100nH
T_j = 125°C
1000 2000 3000 4000
COLLECTOR CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
700
V_CC = 850V
600 V_GE = ±15V
R_G = 0.9Ω
500 L_S = 100nH
T_j = 125°C
400
300
200
100
0
0
1000 2000 3000 4000
EMITTER CURRENT, I_E, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
700
V_CC = 850V
600
V_GE = ±15V
I_C = 1800A
500
L_S = 100nH
T_j = 125°C
400
300
200
100
0
0
2
4
6
8
10
GATE RESISTANCE, R_G, (Ω)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10¹
V_CC = 850V
V_GE = ±15V
R_G(off) = 2.2Ω
R_G(on) = 0.9Ω
L_S = 100nH
T_j = 125°C
10⁰
10^-1
0
1000 2000 3000 4000
COLLECTOR CURRENT, I_C, (AMPERES)
4
Rev. 4/09