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| CM1400DUC-24S Datasheet, PDF (6/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE | |||
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Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (724) 925-7272 www.pwrx.com
CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Inductive Load
Irr
trr
103
EMITTER CURRENT, IE, (AMPERES)
104
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
REVERSE RECOVERY CHARACTERISTICS
(TYPICAL)
103
102
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 150°C
Inductive Load
Irr
trr
103
EMITTER CURRENT, IE, (AMPERES)
104
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
103
GATE CHARGE VS. VGE
20
IC = 600A
VCC = 1400V
15 Tj = 25°C
10
5
0
0
103
1000 2000 3000 4000 5000
GATE CHARGE, QG, (nC)
HALF-BRIDGE SWITCHING
CHARACTERISTICS (TYPICAL)
102
101
100
102
VCC = 600V
VGE = ±15V
RG = 0Ω
Tj = 125°C
Eon
Eoff
Err
103
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
104
103
102
VCC = 600V
VGE = ±15V
101
RG = 0Ω
Tj = 150°C
101
102
Eon
Eoff
Err
103
COLLECTOR CURRENT, IC, (AMPERES)
EMITTER CURRENT, IE, (AMPERES)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(MAXIMUM)
10010-3
10-2
10-1
100
104
101
102
VCC = 600V
VGE = ±15V
IC/IE = 1400A
Tj = 125°C
101
10-1
100
GATE RESISTANCE, RG, (â¦)
Eon
Eoff
Err
101
102
VCC = 600V
VGE = ±15V
IC/IE = 1400A
Tj = 150°C
101
10-1
100
GATE RESISTANCE, RG, (â¦)
Eon
Eoff
Err
101
10-1
10-2
10-3
Single Pulse
TC = 25°C
Per Unit Base =
Rth(j-c) =
16 K/kW
(IGBT)
Rth(j-c) =
26 K/kW
(FWDi)
10-5
TIME, (s)
10-4
10-1
10-2
10-3
10-3
6
09/12 Rev. 0
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