CM1400DUC-24S Datasheet, PDF (2/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
Absolute Maximum Ratings, T_j = 25°C unless otherwise specified
Characteristics
Collector-Emitter Voltage (V_GE = 0V)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_C = 124°C)^*2,*4
Collector Current (Pulse, Repetitive)^*3
Total Power Dissipation (T_C = 25°C)^*2,*4
Emitter Current^*2
Emitter Current (Pulse, Repetitive)^*3
Isolation Voltage (Terminals to Baseplate, RMS, f = 60Hz, AC 1 minute)
Maximum Junction Temperature
Maximum Case Temperature^*4
Operating Junction Temperature
Storage Temperature
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*2 Junction temperature (T_j) should not increase beyond maximum junction
temperature (T_j(max)) rating.
*3 Pulse width and repetition rate should be such that device junction temperature (T_j)
does not exceed T_j(max) rating.
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
116.0
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
96.4
The heatsink thermal resistance should be measured just under the chips.
74.5
54.9
33.0
13.4
0
Symbol
V_CES
V_GES
I_C
I_CRM
P_tot
I_E^*1
I_ERM^*1
V_isol
T_j(max)
T_{C (max)}
T_j(op)
T_stg
Rating
1200
±20
1400
2800
9370
1400
2800
4000
175
125
-40 to +150
-40 to +125
Tr2 Di2
Tr2 Di2
Tr2 Di2
Tr2 Di2
Tr2 Di2
Tr2 Di2
Di1 Tr1
Di1 Tr1
Di1 Tr1
Di1 Tr1
Di1 Tr1
Di1 Tr1
LABEL SIDE
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
Units
Volts
Volts
Amperes
Amperes
Watts
Amperes
Amperes
Volts
°C
°C
°C
°C
2
09/12 Rev. 0