CM1400DUC-24S Datasheet, PDF (3/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
Electrical Characteristics, T_j = 25°C unless otherwise specified
Characteristics
Symbol
Test Conditions
Collector-Emitter Cutoff Current
Gate-Emitter Leakage Current
Gate-Emitter Threshold Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Emitter-Collector Voltage
Emitter-Collector Voltage
Reverse Recovery Time
Reverse Recovery Charge
Turn-on Switching Energy per Pulse
Turn-off Switching Energy per Pulse
Reverse Recovery Energy per Pulse
Internal Lead Resistance
Internal Gate Resistance
I_CES
I_GES
V_GE(th)
V_CE(sat)
(Terminal)
V_CE(sat)
(Chip)
C_ies
C_oes
C_res
Q_G
t_d(on)
t_r
t_d(off)
t_f
V_EC^*1
(Terminal)
V_EC^*1
(Chip)
t_rr^*1
Q_rr^*1
E_on
E_off
E_rr^*1
R_{CC' + EE'}
r_g
V_CE = V_CES, V_GE = 0V
V_GE = V_GES, V_CE = 0V
I_C = 140mA, V_CE = 10V
I_C = 1400A, V_GE = 15V, T_j = 25°C^*6
I_C = 1400A, V_GE = 15V, T_j = 125°C^*6
I_C = 1400A, V_GE = 15V, T_j = 150°C^*6
I_C = 1400A, V_GE = 15V, T_j = 25°C^*6
I_C = 1400A, V_GE = 15V, T_j = 125°C^*6
I_C = 1400A, V_GE = 15V, T_j = 150°C^*6
V_CE = 10V, V_GE = 0V
V_CC = 600V, I_C = 1400A, V_GE = 15V
V_CC = 600V, I_C = 1400A, V_GE = ±15V,
R_G = 0Ω, Inductive Load
I_E = 1400A, V_GE = 0V, T_j = 25°C^*6
I_E = 1400A, V_GE = 0V, T_j = 125°C^*6
I_E = 1400A, V_GE = 0V, T_j = 150°C^*6
I_E = 1400A, V_GE = 0V, T_j = 25°C^*6
I_E = 1400A, V_GE = 0V, T_j = 125°C^*6
I_E = 1400A, V_GE = 0V, T_j = 150°C^*6
V_CC = 600V, I_E = 1400A, V_GE = ±15V
R_G = 0Ω, Inductive Load
V_CC = 600V, I_C = I_E = 1400A,
V_GE = ±15V, R_G = 0Ω, T_j = 150°C,
Inductive Load
Main Terminals-Chip,
Per Switch,T_C = 25°C^*4
Per Switch
*1 Represent ratings and characteristics of the anti-parallel, emitter-to-collector clamp diode.
*4 Case temperature (T_C) and heatsink temperature (T_s) is measured on the surface
(mounting side) of the baseplate and the heatsink side just under the chips.
Refer to the figure to the right for chip location.
The heatsink thermal resistance should be measured just under the chips.
*6 Pulse width and repetition rate should be such as to cause negligible temperature rise.
116.0
Tr2 Di2
96.4
Tr2 Di2
74.5
Tr2 Di2
54.9
Tr2 Di2
33.0
13.4
0
Tr2 Di2
Tr2 Di2
Min.
—
—
5.4
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Di1 Tr1
Di1 Tr1
Di1 Tr1
Di1 Tr1
Di1 Tr1
Di1 Tr1
Typ.
—
—
6.0
1.55
1.75
1.80
1.55
1.75
1.80
—
—
—
3500
—
—
—
—
1.65
1.65
1.65
1.65
1.65
1.65
—
90
82.2
260
122
0.286
1.7
09/12 Rev. 0
LABEL SIDE
Tr1, Tr2: IGBT, Di1, Di2: FWDi
Each mark points to the center position of each chip.
Max.
1
3.0
6.6
1.90
—
—
1.90
—
—
150
30
2.5
—
900
250
950
350
2.10
—
—
2.10
—
—
450
—
—
—
—
—
—
Units
mA
µA
Volts
Volts
Volts
Volts
Volts
Volts
Volts
nF
nF
nF
nC
ns
ns
ns
ns
Volts
Volts
Volts
Volts
Volts
Volts
ns
µC
mJ
mJ
mJ
mΩ
Ω
3