CM1400DUC-24S Datasheet, PDF (5/6 Pages) Mitsubishi Electric Semiconductor – HIGH POWER SWITCHING USE INSULATED TYPE

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CM1400DUC-24S
Mega Power Dual IGBT
1400 Amperes/1200 Volts
3000
2500
2000
1500
OUTPUT CHARACTERISTICS
(CHIP - TYPICAL)
V_GE = 20V
15 _13.5
T_j = 25°C
12
11
100
10
500
9
0
0
2
4
6
8 10
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
FREE-WHEEL DIODE
FORWARD CHARACTERISTICS
(CHIP - TYPICAL)
10⁴
10³
10²
10¹
0
V_GE = 15V
T_j = 25°C
T_j = 125°C
T_j = 150°C
0.5 1.0 1.5 2.0 2.5 3.0
EMITTER-COLLECTOR VOLTAGE, V_EC, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
10⁴
V_CC = 600V
V_GE = ±15V
R_G = 0Ω
10³
t_d(off)
T_j = 150°C
Inductive Load
t_d(on)
t_r
10²
t_f
10¹
10²
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
3.5
V_GE = 15V
3.0
T_j = 25°C
T_j = 125°C
2.5
T_j = 150°C
2.0
1.5
1.0
0.5
0
0 500 1000 1500 2000 2500 3000
COLLECTOR CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
(TYPICAL)
VCE
10³
10²
C_ies
C_oes
10¹
10⁰
C_res
V_GE = 0V
T_j = 25°C
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10³
V_CC = 600V
V_GE = ±15V
t_r
t_d(on)
COLLECTOR-EMITTER
SATURATION VOLTAGE CHARACTERISTICS
(CHIP - TYPICAL)
10
T_j = 25°C
8
I_C = 2800A
6
I_C = 1400A
4
I_C = 560A
2
0
6
10⁴
10³
8 10 12 14 16 18 20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
HALF-BRIDGE
SWITCHING CHARACTERISTICS
(TYPICAL)
t_d(off)
V_CC = 600V
V_GE = ±15V
R_G = 0Ω
T_j = 125°C
Inductive Load
t_d(on)
t_r
10²
t_f
10¹
10²
10³
10⁴
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING TIME VS.
GATE RESISTANCE
(TYPICAL)
10³
V_CC = 600V
V_GE = ±15V
t_r
t_d(on)
t_d(off)
t_f
10²
10^-1
I_C = 1400A
T_j = 125°C
Inductive Load
10⁰
10¹
EXTERNAL GATE RESISTANCE, R_G, (Ω)
t_d(off)
t_f
10²
10^-1
I_C = 1400A
T_j = 150°C
Inductive Load
10⁰
10¹
EXTERNAL GATE RESISTANCE, R_G, (Ω)
09/12 Rev. 0
5