CM200HG-130H Datasheet, PDF (5/5 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
FALL TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10¹
10⁰
10^-1
10¹
V_CC = 3600V
V_GE = ±15V
R_G(off) = 72Ω
R_G(on) = 30Ω
L_S = 200nH
T_j = 125°C
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING LOSS (ON) VS.
COLLECTOR CURRENT
(TYPICAL)
4.0
V_CC = 3600V
3.5 _{VGE = ±15V}
3.0
R_G(off) = 72Ω
R_G(on) = 30Ω
2.5 ^{LS = 200nH}
T_j = 125°C
2.0
1.5
1.0
0.5
0
0
10²
100 200 300 400 500
COLLECTOR CURRENT, I_C, (AMPERES)
CAPACITANCE VS.
COLLECTOR-EMITTER VOLTAGE
(TYPICAL)
C_ies
10¹
C_oes
10⁰
V_GE = 15V
f = 100kHz
C_res
T_j = 25°C
10^-1
10^-1
10⁰
10¹
10²
COLLECTOR-EMITTER VOLTAGE, V_CE, (VOLTS)
RISE TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10¹
V_CC = 3600V
V_GE = ±15V
R_G(off) = 72Ω
R_G(on) = 30Ω
L_S = 200nH
T_j = 125°C
10⁰
10^-1
10¹
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING LOSS (OFF) VS.
GATE RESISTANCE
(TYPICAL)
4.0
3.5
V_CC = 3600V
V_GE = ±15V
3.0 ^{IC = 200A}
L_S = 200nH
2.5 ^Tj ^{= 125°C}
2.0
1.5
1.0
0.5
0
0 20 40 60 80 100 120
GATE RESISTANCE, R_G, (Ω)
COLLECTOR-EMITTER SATURATION
VOLTAGE CHARACTERISTICS
(TYPICAL)
8
V_GE = 15V
7
T_j = 25°C
6
T_j = 125°C
5
4
3
2
1
0
0 100 200 300 400 500
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING LOSS (OFF) VS.
COLLECTOR CURRENT
(TYPICAL)
4.0
V_CC = 3600V
3.5 _{VGE = ±15V}
3.0
R_G(off) = 72Ω
R_G(on) = 30Ω
2.5 ^{LS = 200nH}
T_j = 125°C
2.0
1.5
1.0
0.5
0
0
4.0
100 200 300 400 500
COLLECTOR CURRENT, I_C, (AMPERES)
SWITCHING LOSS (ON) VS.
GATE RESISTANCE
(TYPICAL)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0
0
V_CC = 3600V
V_GE = ±15V
I_C = 200A
L_S = 200nH
T_j = 125°C
20 40 60 80 100 120
GATE RESISTANCE, R_G, (Ω)
TRANSIENT THERMAL
IMPEDANCE CHARACTERISTICS
(IGBT & FWDI)
1.2
SINGLE PULSE
1.0
T_C = 25°C
IGBT = R_th(j-c)Q =
42°K/kW
0.8 _{FWDI = Rth(j-c)D =}
66°K/kW
0.6
0.4
0.2
0
10^-3
10^-2
10^-1
10⁰
10¹
TIME, (s)
8/05
5