CM200HG-130H Datasheet, PDF (1/5 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

CM200HG-130H
Powerex, Inc., 200 E. Hillis Street, Youngwood, Pennsylvania 15697-1800 [phone]
Single IGBTMOD™
HVIGBT Module
200 Amperes/6500 Volts
C
H
F
M
G
A
D
DETAIL “A”
EB
K (4 PLACES)
DETAIL “B”
R
T
S
J
V
U
L (2 PLACES)
Q
N
P
H
V
X
Y
W
Z
BB
BB
DD
CC
AA
DETAIL “A”
DETAIL “B”
Outline Drawing and Circuit Diagram
Dimensions
Inches
Millimeters
A
5.51
140.0
B
2.87
73.0
C
1.89+0.04/-0.0 48.0+1.0/-0.0
D
4.88
124.0
E
2.24
57.0
F
0.85
21.6
G
0.51
12.9
H
0.20
5.0
J
1.73
44.0
K
M6 Metric
M6
L
M8 Metric
M8
M
0.64
16.2
N
1.59
40.4
P
1.10
28.0
Dimensions
Q
R
S
T
U
V
W
X
Y
Z
AA
BB
CC
DD
Inches
1.44
0.22
0.16
0.68
1.61
0.24
2.44
0.47
0.14
0.11
0.06
0.02
0.05 Dia.
10°
Millimeters
36.5
5.5
4.0
17.4
41.0
6.0
62.0
12.0
3.5
2.8
1.6
0.5
1.2 Dia.
10°
Description:
Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of one IGBT Transistor in a
reverse-connected super-fast
recovery free-wheel diode.
All components and interconnects
are isolated from the heat sinking
baseplate, offering simplified
system assembly and thermal
management.
Features:
£ Low Drive Power
£ Low V_CE(sat)
£ Super-Fast Recovery
Free-Wheel Diode
£ Isolated Baseplate for Easy
Heat Sinking
Applications:
£ Traction
£ Medium Voltage Drives
£ High Voltage Power Supplies
Ordering Information:
Example: Select the complete
part module number you desire
from the table below -i.e.
CM200HG-130H is a 6500V
(V_CES), 200 Ampere Single
IGBTMOD™ Power Module.
Type
Current Rating
V_CES
Amperes
Volts (x 50)
CM
200
130
8/05
1