CM200HG-130H Datasheet, PDF (2/5 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Absolute Maximum Ratings, T_j = 25 °C unless otherwise specified
Ratings
Symbol
Junction Temperature
Storage Temperature
Operating Temperature
Collector-Emitter Voltage (V_GE = 0V, T_j = -40°C)
Collector-Emitter Voltage (V_GE = 0V, T_j = +25°C)
Collector-Emitter Voltage (V_GE = 0V, T_j = +125°C)
Gate-Emitter Voltage (V_CE = 0V)
Collector Current (DC, T_c = 80°C)
Peak Collector Current (Pulse)
Emitter Current** (T_c = 25°C)
Emitter Surge Current** (Pulse)
Maximum Collector Dissipation (T_c = 25°C, IGBT Part, T_j(max) ≤ 125°C)
Partial Discharge (V₁ = 6900 V_rms, V₂ = 5100 V_rms, 60 Hz (Acc. to IEC 1287))
Max. Mounting Torque M8 Main Terminal Screws
T_j
T_stg
T_opr
V_CES
V_CES
V_CES
V_GES
I_C
I_CM
I_E
I_EM
P_C
Q_pd
–
Max. Mounting Torque M6 Mounting Screws
–
Module Weight (Typical)
–
Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.)
V_iso
Maximum Turn-Off Switching Current
–
(V_CC ≤ 4500V, V_GE = ±15V, R_G(off) ≥ 72Ω, T_j = 125°C)
Short Circuit Capability, Maximum Pulse Width
–
(V_CC ≤ 4500V, V_GE = ±15V, R_G(off) ≥ 72Ω, T_j = 125°C)
Maximum Reverse Recovery Instantaneous Power
–
(V_CC ≤ 4500V, di_e/dt ≤ 1000A/μs, T_j = 125°C)
* Pulse width and repetition rate should be such that device junction temperature (T_j) does not exceed T_oprmax rating (125°C).
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
CM200HG-130H
-40 to 150
-40 to 125
-40 to 125
5800
6300
6500
±20
200
400*
200
400*
2900
10
133
53
0.52
10200
400
10
1200
Units
°C
°C
°C
Volts
Volts
Volts
Volts
Amperes
Amperes
Amperes
Amperes
Watts
pC
in-lb
in-lb
kg
Volts
Amperes
µs
kW
2
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