CM200HG-130H Datasheet, PDF (4/5 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
2000
1600
1200
OUTPUT CHARACTERISTICS
(TYPICAL)
T_j = 25°C
16V
15V
18V
14V
V_GE = 20V
13V
12V
800
10V
400
0
0
4
8 12 16 20
COLLECTOR-EMITTER VOLTAGE, V_CE(sat), (VOLTS)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
1.2
V_CC = 3600V
1.0 ^{VGE = ±15V}
R_G(on) = 30Ω
0.8
L_S = 200nH
T_j = 125°C
0.6
0.4
0.2
0
0 100 200 300 400 500
EMITTER CURRENT, I_E, (AMPERES)
4000
3500
3000
TRANSFER CHARACTERISTICS
(TYPICAL)
V_CE = 20V
T_j = 25°C
T_j = 125°C
2500
2000
1500
1000
500
0
0
5
10
15
20
GATE-EMITTER VOLTAGE, V_GE, (VOLTS)
FREE-WHEEL DIODE FORWARD
CHARACTERISTICS (TYPICAL)
8
7
V_GE = 0V
T_j = 25°C
6
T_j = 125°C
5
4
3
2
1
0
0 100 200 300 400 500
EMITTER CURRENT, I_E, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
1.2
V_CC = 3600V
1.0 ^{VGE = ±15V}
I_C = 200A
0.8
L_S = 200nH
T_j = 125°C
0.6
0.4
0.2
0
0
10¹
20 40 60 80 100 120
GATE RESISTANCE, R_G, (Ω)
TURN-OFF DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10⁰
10^-1
10¹
V_CC = 3600V
V_GE = ±15V
R_G(off) = 72Ω
R_G(on) = 30Ω
L_S = 200nH
T_j = 125°C
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
ENERGY CHARACTERISTICS (TYPICAL)
1.2
V_CC = 3600V
1.0 ^{VGE = ±15V}
R_G(on) = 30Ω
0.8
L_S = 200nH
T_j = 125°C
0.6
0.4
0.2
0
0 100 200 300 400 500
EMITTER CURRENT, I_E, (AMPERES)
FREE-WHEEL DIODE REVERSE RECOVERY
CHARGE CHARACTERISTICS (TYPICAL)
1.2
V_CC = 3600V
1.0 ^{VGE = ±15V}
I_C = 200A
0.8
L_S = 200nH
T_j = 125°C
0.6
0.4
0.2
0
0
10¹
20 40 60 80 100 120
GATE RESISTANCE, R_G, (Ω)
TURN-ON DELAY TIME VS.
COLLECTOR CURRENT
(TYPICAL)
10⁰
10^-1
10¹
V_CC = 3600V
V_GE = ±15V
R_G(off) = 72Ω
R_G(on) = 30Ω
L_S = 200nH
T_j = 125°C
10²
10³
COLLECTOR CURRENT, I_C, (AMPERES)
4
8/05