CM200HG-130H Datasheet, PDF (3/5 Pages) Mitsubishi Electric Semiconductor – HVIGBT MODULES HIGH POWER SWITCHING USE INSULATED TYPE

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CM200HG-130H
Single IGBTMOD™ HVIGBT Module
200 Amperes/6500 Volts
Static Electrical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Collector-Cutoff Current*
I_CES
V_CE = V_CES, V_GE = 0V, T_j = 25°C
–
V_CE = V_CES, V_GE = 0V, T_j = 125°C
–
Gate-Emitter Threshold Voltage
V_GE(th)
I_C = 20mA, V_CE = 10V
5.0
Gate Leakage Current
I_GES
V_GE = V_GES, V_CE = 0V
–
Collector-Emitter Saturation Voltage
V_CE(sat)
I_C = 200A, V_GE = 15V, T_j = 25°C
–
I_C = 200A, V_GE = 15V, T_j = 125°C
–
Input Capacitance
C_ies
V_CE = 10V, V_GE = 0V,
–
Output Capacitance
C_oes
f = 100kHz,
–
Reverse Transfer Capacitance
C_res
T_j = 25°C
–
Total Gate Charge
Q_G
V_CC = 3600V, I_C = 200A, V_GE = 15V
–
Emitter-Collector Voltage**
V_EC
I_E = 200A, V_GE = 0V, T_j = 25°C
–
I_E = 200A, V_GE = 0V, T_j = 125°C
–
Turn-On Delay Time
t_d(on)
V_CC = 3600V, I_C = 200A,
–
Turn-On Rise Time
t_r
V_GE1 = -V_GE2 = 15V, R_G(on) = 30Ω,
–
Turn-On Switching Energy
E_on
T_j = 125°C, t_off = 60µs, Inductive Load
–
Turn-Off Delay Time
t_d(off)
V_CC = 3600V, I_C = 200A,
–
Turn-Off Fall Time 1
t_f1
V_GE1 = -V_GE2 = 15V,
–
Turn-Off Fall Time 2
t_f2
R_G(off) = 72Ω,
–
Turn-Off Switching Energy
E_off
T_j = 125°C, t_off = 60µs, Inductive Load
–
Reverse Recovery Time 1**
t_rr1
V_CC = 3600V, I_E = 200A,
–
Reverse Recovery Time 2**
t_rr2
di_e/dt = -670A/μs,
–
Reverse Recovery Charge**
Q_rr
T_j = 125°C,
–
Reverse Recovery Energy**
E_rec
t_off = 60µs, Inductive Load
–
* Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
Thermal Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Thermal Resistance, Junction to Case
R_th(j-c) Q
Per IGBT
–
Thermal Resistance, Junction to Case
R_th(j-c) D
Per FWDi
–
Contact Thermal Resistance, Case to Fin
R_th(c-f)
Per Module, Thermal Grease Applied
–
Mechanical Characteristics, T_j = 25 °C unless otherwise specified
Characteristics
Symbol
Test Conditions
Min.
Comparative Tracking Index
CTI
–
600
Clearance
–
–
26.0
Creepage Distance
–
–
56.0
Internal Inductance
L_C-E(int)
–
–
Internal Lead Resistance
R_C-E(int)
–
–
Typ.
Max. Units
–
3.0
mA
10
30.0
mA
6.0
7.0
Volts
–
0.5
µA
5.1
–
Volts
5.0
–
Volts
41.0
–
nF
2.5
–
nF
0.7
–
nF
3.3
–
µC
4.0
–
Volts
3.6
–
Volts
1.2
–
µs
0.35
–
µs
1.5
–
J/P
6.6
–
µs
0.5
–
µs
3.3
–
µs
1.2
–
J/P
1.0
–
µs
2.4
–
µs
370
–
µC
0.7
–
J/P
Typ.
Max. Units
–
42.0 K/kW
–
66.0 K/kW
18.0
–
K/kW
Typ.
–
–
–
54.0
–
Max.
–
–
–
–
–
Units
–
mm
mm
µH
mΩ
8/05
3