PSMN7R8-120ES_15 Datasheet, PDF (9/13 Pages) NXP Semiconductors – N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
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Fig. 14. Gate charge waveform definitions
10
V_GS
(V)
8
6
V_DS= 96 V
60 V
24 V
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4
2
0
0
50
100
150
200
Q_G (nC)
Fig. 15. Gate-source voltage as a function of gate
charge; typical values
10⁵
C
(pF)
10⁴
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C_iss
100
I_S
(A)
80
60
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40
10³
C_oss
20
T_j = 175°C
T_j = 25 °C
C_rss
10²
10^-1
1
10
10²
V_DS (V)
0
0
0.3
0.6
0.9
1.2
V_SD(V)
Fig. 16. Input, output and reverse transfer capacitances _{Fig. 17. Source (diode forward) current as a function of}
as a function of drain-source voltage; typical
source-drain (diode forward) voltage; typical
values
values
PSMN7R8-120ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 February 2013
© NXP B.V. 2013. All rights reserved
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