PSMN7R8-120ES_15 Datasheet, PDF (8/13 Pages) NXP Semiconductors – N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
5
V_GS(th)
(V)
4
3
2
1
003aad280
max
typ
min
10^{- 1}
I_D
(A)
10^{- 2}
10^{- 3}
10^{- 4}
10^{- 5}
03aa35
min typ max
0
- 60
0
60
120
180
T_j (°C)
10^{- 6}
0
2
4
6
V_GS (V)
Fig. 10. Gate-source threshold voltage as a function of Fig. 11. Sub-threshold drain current as a function of
junction temperature
gate-source voltage
12
R_DSon
(mW)
11
V_GS(V) = 4.5
003aak694
5
3
a
2.5
10
2
9
1.5
8
5.5
6
7
6.5
1
7
6
10
0.5
003aag654
5
0
25
50
75
100 _{ID (A)125}
0
-60
0
60
120
180
T_j (°C)
Fig. 12. Drain-source on-state resistance as a function Fig. 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
PSMN7R8-120ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 February 2013
© NXP B.V. 2013. All rights reserved
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