PSMN7R8-120ES_15 Datasheet, PDF (2/13 Pages) NXP Semiconductors – N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
5. Pinning information
Table 2. Pinning information
Pin
Symbol Description
1
G
gate
2
D
drain
3
S
source
mb
D
drain
Simplified outline
mb
Graphic symbol
D
G
mbb076 S
123
I2PAK (SOT226)
6. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN7R8-120ES
I2PAK
Description
plastic single-ended package (I2PAK); TO-262
7. Marking
Table 4. Marking codes
Type number
PSMN7R8-120ES
Marking code
PSMN7R8-120ES
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_DS
drain-source voltage
T_j ≥ 25 °C; T_j ≤ 175 °C
V_DGR
drain-gate voltage
T_j ≥ 25 °C; T_j ≤ 175 °C; R_GS = 20 kΩ
V_GS
gate-source voltage
I_D
drain current
V_GS = 10 V; T_mb = 25 °C; Fig. 1
V_GS = 10 V; T_mb = 100 °C; Fig. 1
I_DM
peak drain current
pulsed; t_p ≤ 10 µs; T_mb = 25 °C; Fig. 4
P_tot
total power dissipation
T_mb = 25 °C; Fig. 2
T_stg
storage temperature
PSMN7R8-120ES
Product data sheet
All information provided in this document is subject to legal disclaimers.
18 February 2013
Version
SOT226
Min Max Unit
-
120 V
-
120 V
-20 20
V
-
70
A
-
70
A
-
280 A
-
349 W
-55 175 °C
© NXP B.V. 2013. All rights reserved
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