PSMN7R8-120ES_15 Datasheet, PDF (7/13 Pages) NXP Semiconductors – N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK

NXP Semiconductors
PSMN7R8-120ES
N-channel 120 V 7.9 mΩ standard level MOSFET in I2PAK
120
I_D
(A)
100
10 8 6.5 6 5.5
80
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V_GS(V) = 5
40
R_DSon
(mΩ)
30
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60
20
40
4.5
10
20
4
0
0
1
2
3
V_DS(V)
0
0
4
8
12
16
V_GS (V)
Fig. 6. Output characteristics: drain current as a
Fig. 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
200
g_fs
(S)
150
100
50
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100
I_D
(A)
80
60
40
20
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T_j = 175 °C
T_j = 25 °C
0
0
20
40
60
80
100
I_D (A)
Fig. 8. Forward transconductance as a function of
drain current; typical values
0
0
1
2
3
4
5V_GS(V)6
Fig. 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
PSMN7R8-120ES
Product data sheet
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18 February 2013
© NXP B.V. 2013. All rights reserved
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