PSMN4R5-30YLC_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN4R5-30YLC
N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower
16
RDS on
(m)
12
8
4
0
0
003aae986
2.6
2.8
3.0
4.5
3.5
VGS (V) =10V
10
20
30 _{ID (A)} 40
2
a
1.5
1
003a a f398
4.5V
VGS = 10V
0.5
0
-6 0
0
60
120
180
Tj ( C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
10
VGS
(V)
8
6
4
2
0
0
003aae990
6V
24V
VDS = 15V
10
20 _{QG (nC)} 30
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN4R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 July 2011
© NXP B.V. 2011. All rights reserved.
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