PSMN4R5-30YLC_15 Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN4R5-30YLC
N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
Q_GD
gate-drain charge
V_GS = 4.5 V; I_D = 20 A;
V_DS = 15 V; see Figure 14;
see Figure 15
Q_G(tot)
total gate charge
V_GS = 4.5 V; I_D = 20 A;
V_DS = 15 V; see Figure 14;
see Figure 15
Min Typ Max Unit
-
2.85 -
nC
-
9.6 -
nC
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base;
connected to drain
3. Ordering information
Simplified outline
mb
1234
SOT669 (LFPAK;
Power-SO8)
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN4R5-30YLC
LFPAK;
Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
4. Marking
Version
SOT669
Table 4. Marking codes
Type number
PSMN4R5-30YLC
[1] % = placeholder for manufacturing site code.
Marking code^[1]
4C530L
PSMN4R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 July 2011
© NXP B.V. 2011. All rights reserved.
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