PSMN4R5-30YLC_15 Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN4R5-30YLC
N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower
100
gfs
(S )
75
003aae987
50
25
0
0
25
50
75
100
ID (A)
80
ID
(A)
60
003aae989
40
20
0
0
Tj = 150 C
Tj = 25 C
1
2
3
4
VGS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
10^-1
ID
(A)
10^-2
003a a f399
Min Typ Max
10^-3
10^-4
10^-5
10^-6
0
1
2
3
VGS (V)
Fig 9. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
3
VGS (th)
(V)
Max (1mA)
2
5mA
003a a f400
ID = 1mA
1 ^{Min (5mA)}
0
-6 0
0
60
120
180
Tj ( C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN4R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 July 2011
© NXP B.V. 2011. All rights reserved.
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