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| PSMN4R5-30YLC_15 Datasheet, PDF (5/15 Pages) NXP Semiconductors – N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
PSMN4R5-30YLC
N-channel 30 V 4.8 m⦠logic level MOSFET in LFPAK using NextPower
104
ID
(A)
103
102
10
1
10-1
10-1
Limit R DS on = VDS / ID
DC
1
003aae982
tp =10 ï s
100 ïs
1 ms
10 ms
100 ms
10
102
VDS (V)
Fig 4. Safe operating area; continuous and peak drain currents as a function of drain-source voltage
6. Thermal characteristics
Table 6.
Symbol
Rth(j-mb)
Thermal characteristics
Parameter
thermal resistance from
junction to mounting base
Conditions
see Figure 5
Min Typ Max Unit
-
2.26 2.48 K/W
10
Zth(j-mb)
(K/W)
ï¤ = 0.5
1
0.2
0.1
0.05
10-1
0.02
003aae983
P
ï¤ = tp
T
s ingle s hot
tp
t
T
10-2
10-6
10-5
10-4
10-3
10-2
10-1
tp (s ) 1
Fig 5. Transient thermal impedance from junction to mounting base as a function of pulse duration
PSMN4R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 â 5 July 2011
© NXP B.V. 2011. All rights reserved.
5 of 15
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