PSMN4R5-30YLC_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN4R5-30YLC
N-channel 30 V 4.8 mΩ logic level MOSFET in LFPAK using NextPower
Table 7.
Symbol
t_d(on)
t_r
t_d(off)
t_f
Q_oss
Characteristics …continued
Parameter
turn-on delay time
rise time
turn-off delay time
fall time
output charge
Source-drain diode
V_SD
source-drain voltage
t_rr
reverse recovery time
Q_r
recovered charge
t_a
reverse recovery rise time
t_b
reverse recovery fall time
Conditions
V_DS = 15 V; R_L = 0.75 Ω;
V_GS = 4.5 V; R_G(ext) = 4.7 Ω
V_GS = 0 V; V_DS = 15 V; f = 1 MHz;
T_j = 25 °C
I_S = 20 A; V_GS = 0 V; T_j = 25 °C;
see Figure 17
I_S = 20 A; dI_S/dt = -100 A/µs;
V_GS = 0 V; V_DS = 15 V
V_GS = 0 V; I_S = 20 A;
dI_S/dt = -100 A/µs; V_DS = 15 V;
see Figure 18
Min Typ Max Unit
-
17.2 -
ns
-
18.7 -
ns
-
24.3 -
ns
-
8.75 -
ns
-
7.9 -
nC
-
0.8 1.1 V
-
29.8 -
ns
-
27.8 -
nC
-
18.8 -
ns
-
11
-
ns
50
ID
10 4.5 3.0
(A)
40
30
20
10
0
0
1
003aae984
2.8
VGS (V) =2.6
2.4
2.2
2
VDS (V)
16
RDS on
(m)
12
003aae985
8
4
0
0
4
8
12
16
VGS (V)
Fig 6. Output characteristics: drain current as a
Fig 7. Drain-source on-state resistance as a function
function of drain-source voltage; typical values
of gate-source voltage; typical values
PSMN4R5-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 3 — 5 July 2011
© NXP B.V. 2011. All rights reserved.
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