PSMN2R6-30YLC Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
12
RDS on
(mΩ)
10
8
6
4
2
0
0
003aaf 664
2.8
3.0
VGS (V) = 3.5
4.5
5.0 ¹⁰
25
50
75 _{ID (A)} 100
2
a
1.5
1
003aaf 665
VGS= 10V
4.5V
0.5
0
-6 0
0
60
120
180
Tj ( C)
Fig 12. Drain-source on-state resistance as a function Fig 13. Normalized drain-source on-state resistance
of drain current; typical values
factor as a function of junction temperature
V_DS
I_D
V_GS(pl)
V_GS(th)
V_GS
Q_GS1 Q_GS2
Q_GS
Q_GD
Q_G(tot)
003aaa508
10
VGS
(V)
8
003aaf 671
6
24V
15V
4
VDS = 6V
2
0
0
10
20
30
40
50
QG (nC)
Fig 14. Gate charge waveform definitions
Fig 15. Gate-source voltage as a function of gate
charge; typical values
PSMN2R6-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 May 2011
© NXP B.V. 2011. All rights reserved.
9 of 15