PSMN2R6-30YLC Datasheet, PDF (1/15 Pages) NXP Semiconductors – N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology

PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using
NextPower technology
Rev. 01 — 2 May 2011
Product data sheet
1. Product profile
1.1 General description
Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is
designed and qualified for use in a wide range of industrial, communications and domestic
equipment.
1.2 Features and benefits
„ High reliability Power SO8 package,
qualified to 175°C
„ Low parasitic inductance and
resistance
„ Optimised for 4.5V Gate drive utilising
NextPower Superjunction technology
„ Ultra low QG, QGD, and QOSS for
high system efficiencies at low and
high loads
1.3 Applications
„ DC-to-DC converters
„ Lithium-ion battery protection
„ Load switching
„ Power OR-ing
„ Server power supplies
„ Sync rectifier
1.4 Quick reference data
Table 1. Quick reference data
Symbol Parameter
Conditions
Min
V_DS
drain-source voltage 25 °C ≤ T_j ≤ 175 °C
I_D
drain current
T_mb = 25 °C; V_GS = 10 V;
see Figure 1
-
[1] _-
P_tot
total power
T_mb = 25 °C; see Figure 2
-
dissipation
T_j
junction temperature
-55
Static characteristics
R_DSon drain-source
V_GS = 4.5 V; I_D = 25 A; T_j = 25 °C;
-
on-state resistance see Figure 12
V_GS = 10 V; I_D = 25 A; T_j = 25 °C;
-
see Figure 12
Typ Max Unit
-
30 V
-
100 A
-
106 W
-
175 °C
3.1 3.65 mΩ
2.35 2.8 mΩ