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| PSMN2R6-30YLC Datasheet, PDF (3/15 Pages) NXP Semiconductors – N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology | |||
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NXP Semiconductors
PSMN2R6-30YLC
N-channel 30 V 2.8m⦠logic level MOSFET in LFPAK using NextPower
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
Min
VDS
VDGR
VGS
ID
IDM
drain-source voltage
drain-gate voltage
gate-source voltage
drain current
peak drain current
25 °C ⤠Tj ⤠175 °C
-
25 °C ⤠Tj ⤠175 °C; RGS = 20 kâ¦
-
-20
VGS = 10 V; Tmb = 25 °C; see Figure 1 [1] -
VGS = 10 V; Tmb = 100 °C; see Figure 1 [1] -
pulsed; tp ⤠10 µs; Tmb = 25 °C;
-
see Figure 4
Ptot
total power dissipation
Tmb = 25 °C; see Figure 2
-
Tstg
storage temperature
-55
Tj
junction temperature
-55
Tsld(M)
peak soldering temperature
-
VESD
electrostatic discharge voltage
MM (JEDEC JESD22-A115)
460
Source-drain diode
IS
source current
ISM
peak source current
Avalanche ruggedness
Tmb = 25 °C
-
pulsed; tp ⤠10 µs; Tmb = 25 °C
-
EDS(AL)S
non-repetitive drain-source
avalanche energy
VGS = 10 V; Tj(init) = 25 °C; ID = 100 A;
-
Vsup ⤠30 V; RGS = 50 â¦; unclamped;
see Figure 3
[1] Continuous current is limited by package.
Max Unit
30 V
30 V
20 V
100 A
100 A
575 A
106 W
175 °C
175 °C
260 °C
-
V
96 A
575 A
50 mJ
150
ID
(A)
120
(1)
90
003a a f659
120
Pder
(%)
80
03na19
60
40
30
0
0
50
100
150
200
Tmb (°C)
0
0
50
100
150
200
Tmb (°C)
Fig 1. Continuous drain current as a function of
mounting base temperature
Fig 2. Normalized total power dissipation as a
function of mounting base temperature
PSMN2R6-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 â 2 May 2011
© NXP B.V. 2011. All rights reserved.
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