PSMN2R6-30YLC Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
160
gfs
(S )
120
003aaf 668
80
40
0
0
25
50
75 _{ID (A)} 100
100
ID
(A)
80
60
40
20
0
0
003aaf 670
Tj = 150°C
Tj = 25 °C
1
2
3
4
VGS (V)
Fig 8. Forward transconductance as a function of
drain current; typical values
10^-1
ID
(A)
10^-2
003aaf 667
Min Typ Max
10^-3
10^-4
10^-5
10^-6
0
1
2
3
VGS (V)
Fig 9. Transfer characteristics; drain current as a
function of gate-source voltage; typical values
3
VGS (th)
(V) _{Max (1mA)}
2
003aaf 666
ID = 5mA
1mA
1 ^{Min (5mA)}
0
-6 0
0
60
120
180
Tj (°C)
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 11. Gate-source threshold voltage as a function of
junction temperature
PSMN2R6-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 May 2011
© NXP B.V. 2011. All rights reserved.
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