PSMN2R6-30YLC Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower technology

NXP Semiconductors
PSMN2R6-30YLC
N-channel 30 V 2.8mΩ logic level MOSFET in LFPAK using NextPower
Table 1. Quick reference data …continued
Symbol Parameter
Conditions
Dynamic characteristics
Q_GD
gate-drain charge V_GS = 4.5 V; I_D = 25 A;
V_DS = 15 V; see Figure 14;
see Figure 15
Q_G(tot) total gate charge
V_GS = 4.5 V; I_D = 25 A;
V_DS = 15 V; see Figure 14;
see Figure 15
[1] Continuous current is limited by package.
2. Pinning information
Min Typ Max Unit
-
5.5 -
nC
-
18 -
nC
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to drain
Simplified outline
mb
Graphic symbol
D
1234
SOT669 (LFPAK; Power-SO8)
G
mbb076 S
3. Ordering information
Table 3. Ordering information
Type number
Package
Name
PSMN2R6-30YLC
LFPAK; Power-SO8
Description
plastic single-ended surface-mounted package; 4 leads
Version
SOT669
4. Marking
Table 4. Marking codes
Type number
PSMN2R6-30YLC
[1] % = placeholder for manufacturing site code
Marking code^[1]
2C630L
PSMN2R6-30YLC
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 01 — 2 May 2011
© NXP B.V. 2011. All rights reserved.
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