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PSMN018-80YS Datasheet, PDF (9/15 Pages) NXP Semiconductors – N-channel LFPAK 80 V 18 mΩ standard level MOSFET
NXP Semiconductors
PSMN018-80YS
N-channel LFPAK 80 V 18 mΩ standard level MOSFET
50
RDSon
(mΩ)
40
30
4.5
5
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5.5
6
7
10
20
10
0
VGS (V) = 20
20
40
60
80
100
ID (A)
VDS
ID
VGS(pl)
VGS(th)
VGS
QGS1 QGS2
QGS
QGD
QG(tot)
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Fig 13. Drain-source on-state resistance as a function Fig 14. Gate charge waveform definitions
of drain current; typical values
10
VGS
(V)
8
6
4
2
16V
64V
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VDS = 40V
104
C
(pF)
103
102
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Ciss
Coss
Crss
0
0
10
20
30
QG (nC)
10
10-1
1
10
102
VDS (V)
Fig 15. Gate-source voltage as a function of gate
charge; typical values
Fig 16. Input, output and reverse transfer capacitances
as a function of drain-source voltage; typical
values
PSMN018-80YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
© NXP B.V. 2010. All rights reserved.
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