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| PSMN018-80YS Datasheet, PDF (2/15 Pages) NXP Semiconductors – N-channel LFPAK 80 V 18 mΩ standard level MOSFET | |||
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NXP Semiconductors
PSMN018-80YS
N-channel LFPAK 80 V 18 m⦠standard level MOSFET
Table 1. Quick reference data â¦continued
Symbol Parameter
Conditions
Dynamic characteristics
QGD
QG(tot)
gate-drain charge
total gate charge
VGS = 10 V; ID = 25 A;
VDS = 40 V; see Figure 14;
see Figure 15
Avalanche ruggedness
EDS(AL)S
non-repetitive
VGS = 10 V; Tj(init) = 25 °C;
drain-source avalanche ID = 45 A; Vsup ⤠80 V;
energy
RGS = 50 â¦; unclamped
Min Typ Max Unit
-
6-
nC
-
26 -
nC
-
-
64 mJ
2. Pinning information
Table 2.
Pin
1
2
3
4
mb
Pinning information
Symbol Description
S
source
S
source
S
source
G
gate
D
mounting base; connected to
drain
Simplified outline
mb
1234
SOT669 (LFPAK)
3. Ordering information
Graphic symbol
D
G
mbb076 S
Table 3. Ordering information
Type number
Package
Name
PSMN018-80YS
LFPAK
Description
Version
plastic single-ended surface-mounted package (LFPAK); 4 leads SOT669
PSMN018-80YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 â 28 October 2010
© NXP B.V. 2010. All rights reserved.
2 of 15
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