PSMN018-80YS Datasheet, PDF (8/15 Pages) NXP Semiconductors – N-channel LFPAK 80 V 18 mΩ standard level MOSFET

NXP Semiconductors
PSMN018-80YS
N-channel LFPAK 80 V 18 mΩ standard level MOSFET
45
R_DSon
(mΩ)
35
003aad291
25
15
5
4
8
12
16
20
V_GS (V)
5
V_GS(th)
(V)
4
3
2
1
0
−60
0
003aad280
max
typ
min
60
120
180
T_j (°C)
Fig 9. Drain-source on-state resistance as a function Fig 10. Gate-source threshold voltage as a function of
of gate-source voltage; typical values
junction temperature
10^−1
03aa35
2.5
I_D
(A)
a
10^−2
min typ max
2.0
003aad045
10^−3
1.5
10^−4
1.0
10^−5
0.5
10^−6
0
2
4
6
V_GS (V)
0.0
-60 -30 0 30 60 90 120 150 180
T_j (°C)
Fig 11. Sub-threshold drain current as a function of
gate-source voltage
Fig 12. Normalized drain-source on-state resistance
factor as a function of junction temperature
PSMN018-80YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
© NXP B.V. 2010. All rights reserved.
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