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PSMN018-80YS Datasheet, PDF (7/15 Pages) NXP Semiconductors – N-channel LFPAK 80 V 18 mΩ standard level MOSFET
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NXP Semiconductors
PSMN018-80YS
N-channel LFPAK 80 V 18 mΩ standard level MOSFET
Table 6. Characteristics …continued
Tested to JEDEC standards where applicable.
Symbol
Parameter
Conditions
Source-drain diode
VSD
source-drain voltage
IS = 5 A; VGS = 0 V; Tj = 25 °C;
see Figure 17
trr
reverse recovery time
IS = 40 A; dIS/dt = 100 A/µs;
Qr
recovered charge
VGS = 0 V; VDS = 40 V
Min Typ Max Unit
-
0.8 1.2 V
-
50
-
ns
-
80
-
nC
100
ID
(A)
80
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20
10 7
6
5.5
60
5
40
4.5
20
VGS (V) = 4
0
0
1
2
3
4
5
VDS (V)
60
ID
(A)
50
40
30
20
10
0
0
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Tj = 175 °C
Tj = 25 °C
2
4
6
VGS (V)
Fig 5. Output characteristics: drain current as a
Fig 6. Transfer characteristics: drain current as a
function of drain-source voltage; typical values
function of gate-source voltage; typical values
50
gfs
(S)
40
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2500
C
(pF)
2000
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Ciss
30
1500
20
Crss
1000
10
0
0
20
40
60
ID (A)
500
0
5
10
15
20
25
VGS (V)
Fig 7. Forward transconductance as a function of
drain current; typical values
Fig 8. Input and reverse transfer capacitances as a
function of gate-source voltage; typical values
PSMN018-80YS
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 02 — 28 October 2010
© NXP B.V. 2010. All rights reserved.
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