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| PMEG2010EPAS_15 Datasheet, PDF (9/15 Pages) NXP Semiconductors – 20 V, 1 A low VF MEGA Schottky barrier rectifier | |||
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NXP Semiconductors
PMEG2010EPAS
20 V, 1 A low VF MEGA Schottky barrier rectifier
11. Test information
RS = 50 Ω
V = VR + IF Ã RS
D.U.T.
IF
SAMPLING
OSCILLOSCOPE
Ri = 50 Ω
VR
mga881
tr
tp
10 %
90 %
input signal
Fig. 14. Reverse recovery time: test circuit and waveforms
P
t2
duty cycle δ =
t1
t2
t1
t
+ IF
trr
t
(1)
output signal
Fig. 15. Duty cycle definition
t
006aaa812
The current ratings for the typical waveforms are calculated according to the equations:
IF(AV) = IM à δ with IM defined as peak current, IRMS = IF(AV) at DC, and IRMS = IM à âδ with
IRMS defined as RMS current.
11.1 Quality information
This product has been qualified in accordance with the Automotive Electronics Council
(AEC) standard Q101 - Stress test qualification for discrete semiconductors, and is
suitable for use in automotive applications.
PMEG2010EPAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
9 / 15
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