PMEG2010EPAS_15 Datasheet, PDF (3/15 Pages) NXP Semiconductors – 20 V, 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG2010EPAS
20 V, 1 A low VF MEGA Schottky barrier rectifier
8. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
Conditions
V_R
reverse voltage
T_j = 25 °C
I_F
forward current
T_sp ≤ 140 °C; δ = 1
I_F(AV)
average forward current
δ = 0.5; f = 20 kHz; T_amb ≤ 125 °C;
[1]
square wave
δ = 0.5; f = 20 kHz; T_sp ≤ 145 °C;
square wave
I_FRM
repetitive peak forward current t_p ≤ 1 ms; δ ≤ 0.25
[2]
I_FSM
non-repetitive peak forward
t_p = 8 ms; T_j(init) = 25 °C; square wave [2]
current
P_tot
total power dissipation
T_amb ≤ 25 °C
[3]
[4]
[1]
T_j
junction temperature
T_amb
ambient temperature
T_stg
storage temperature
Min Max Unit
-
20
V
-
1.4 A
-
1
A
-
1
A
-
7
A
-
17
A
-
500 mW
-
960 mW
-
1800 mW
-
150 °C
-55 150 °C
-65 150 °C
[1] Device mounted on a ceramic Printed-Circuit Board (PCB), Al₂O₃, standard footprint.
[2] Both anode pins connected.
[3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[4] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm}²_.
9. Thermal characteristics
Table 6.
Symbol
R_th(j-a)
Thermal characteristics
Parameter
thermal resistance
from junction to
ambient
Conditions
in free air
R_th(j-sp)
thermal resistance
from junction to solder
point
Min Typ Max Unit
[1][2] -
-
250 K/W
[1][3] -
-
130 K/W
[1][4] -
-
70
K/W
[5]
-
-
12
K/W
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P_R are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] _{Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm}²_.
[4] Device mounted on a ceramic PCB, Al₂O₃, standard footprint.
[5] Soldering point of cathode tab.
PMEG2010EPAS
Product data sheet
All information provided in this document is subject to legal disclaimers.
19 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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