PMEG2010EPAS_15 Datasheet, PDF (6/15 Pages) NXP Semiconductors – 20 V, 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG2010EPAS
20 V, 1 A low VF MEGA Schottky barrier rectifier
10. Characteristics
Table 7.
Symbol
V_(BR)R
V_F
I_R
C_d
t_rr
Characteristics
Parameter
Conditions
reverse breakdown
voltage
I_R = 10 mA; t_p = 300 µs; δ = 0.02;
T_j = 25 °C; pulsed
forward voltage
I_F = 0.5 A; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C; pulsed
I_F = 1 A; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C; pulsed
reverse current
V_R = 10 V; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C; pulsed
V_R = 20 V; t_p ≤ 300 µs; δ ≤ 0.02;
T_j = 25 °C; pulsed
diode capacitance
V_R = 1 V; f = 1 MHz; T_j = 25 °C
V_R = 10 V; f = 1 MHz; T_j = 25 °C
reverse recovery time I_F = 10 mA; I_R = 10 mA; R_L = 100 Ω;
I_R(meas) = 1 mA; T_j = 25 °C
Min Typ Max Unit
20
-
-
V
-
280 -
mV
-
320 375 mV
-
135 -
µA
-
335 1900 µA
-
175 -
pF
-
65
-
pF
-
50
-
ns
10
I_F
(A)
(1)
1 ₍₂₎
10^{- 1}
(3) (4) (5)
006aab628
10^{- 2}
10^{- 3}
10^{- 4}
0
0.2
(1) T_j = 150 °C
(2) T_j = 125 °C
(3) T_j = 85 °C
(4) T_j = 25 °C
(5) T_j = −40 °C
0.4
0.6
V_F (V)
Fig. 4. Forward current as a function of forward
voltage; typical values
10^{- 1}
I_R
(A)
10^{- 2}
10^{- 3}
006aab629
(1)
(2)
10^{- 4}
(3)
10^{- 5}
10^{- 6}
10^{- 7}
(4)
10^{- 8}
0
5
10
(1) T_j = 125 °C
(2) T_j = 85 °C
(3) T_j = 25 °C
(4) T_j = −40 °C
15
20
V_R (V)
Fig. 5. Reverse current as a function of reverse
voltage; typical values
PMEG2010EPAS
Product data sheet
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19 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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