PMEG2010EPAS_15 Datasheet, PDF (7/15 Pages) NXP Semiconductors – 20 V, 1 A low VF MEGA Schottky barrier rectifier

NXP Semiconductors
PMEG2010EPAS
20 V, 1 A low VF MEGA Schottky barrier rectifier
350
C_d
(pF)
300
006aab630
250
200
150
100
50
0
0
4
8
12
f = 1 MHz; T_amb = 25 °C
16
20
V_R (V)
Fig. 6. Diode capacitance as a function of reverse
voltage; typical values
1.5
P_R(AV)
(W)
1.0
0.5
006aab632
(1)
(2)
(3)
(4)
0.5
P_F(AV)
(W)
0.4
0.3
0.2
006aab631
(4)
(3)
(2)
(1)
0.1
0.0
0.0
0.5
T_j = 150 °C
(1) δ = 0.1
(2) δ = 0.2
(3) δ = 0.5
(4) δ = 1
1.0
1.5
I_F(AV) (A)
Fig. 7.
Average forward power dissipation as a
function of average forward current; typical
values
0.3
P_R(AV)
(W)
0.2
aaa-015088
(1)
(2)
(3)
0.1
(4)
0
0
5
T_j = 125 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
10
15
V_R (V)
Fig. 8. Average reverse power dissipation as a
function of reverse voltage; typical values
0
0
5
T_j = 85 °C
(1) δ = 1
(2) δ = 0.9
(3) δ = 0.8
(4) δ = 0.5
10
15
20
V_R (V)
Fig. 9. Average reverse power dissipation as a
function of reverse voltage; typical values
PMEG2010EPAS
Product data sheet
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19 January 2015
© NXP Semiconductors N.V. 2015. All rights reserved
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